/ , lrnc, 20 stern ave. springfield, new jersey 07081 u.s.a. silicon npn power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 BDY71 description ? continuous collector current-lc= 4a ? collector power dissipation- : pc= 29w @tc= 25 c applications ? designed for general purpose switching and amplifier applications. absolute maximum ratings(ta=25c) symbol vcbo vcex vcer vceo vebo ic ib pc tj tstg parameter collector-base voltage collector-emitter voltage vse= -1 .5v collector-emitter voltage rbe= 100q collector-emitter voltage emitter-base voltage collector current-continuous base current-continuous collector power dissipation@tc=25c junction temperature storage temperature value 90 90 60 55 7 4 2 29 200 -65-200 unit v v v v v a a w ?c c thermal characteristics symbol rthj-c parameter thermal resistance.junction to case max 6.0 unit ?c/w pin 1.base 1. b/i1tter 3. collector (case) to-66 package t- -a -n-1 ' ' dim a b c d e 0 h k l n q u v nun ini 3.1!. 40 1730 6.70 0,70 1.40 max 31^0 jjt7,70_ 7.10 l0.90 t 1.60 5.08 2i4 9.30 14.70 12^?0 1.60 24jo jjid 10,20 14.90 12.60 3^0 24,50 3.70 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor BDY71 electrical characteristics tc=25c unless otherwise specified symbol vceo(sus) vcer(sus) v(br)ebo vce(sat) vee(on) iceo icev iebo hfe fr parameter collector-emitter sustaining voltage collector-emitter sustaining voltage emitter-base breakdown voltage collector-emitter saturation voltage base-emitter on voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain current gain-bandwidth product conditions lc= 100ma; ib= 0 lc=100ma;rbe=100a |e=1ma;|c=0 lc= 0.5a; ib= 50ma lc= 0.5a; vce= 4v vce= 30v; ib= 0 vce= 90v; vbe(off)= 1.5v vce= 30v; vbe(oh,= 1.5v,tc=150c veb= 7v; lc= 0 lc= 0.5a ; vce= 4v lc=0.2a;vce=10v min 55 60 7 80 0.8 max 1.0 1.7 0.5 1.0 5.0 1.0 200 unit v v v v v ma ma ma mhz
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